| 摘要 |
In one general aspect, an apparatus can include a shield dielectric disposed within a trench aligned along an axis within an epitaxial layer of a semiconductor, and a shield electrode disposed within the shield dielectric and aligned along the axis. The apparatus can include a first inter-poly dielectric having a portion intersecting a plane orthogonal to the axis where the plane intersects the shield electrode, and a second inter-poly dielectric having a portion intersecting the plane and disposed between the first inter-poly dielectric and the shield electrode. The apparatus can also include a gate dielectric having a portion disposed on the first inter-poly dielectric. |
