Semiconductor epitaxy on diamond for heat spreading applications

摘要

Various embodiments provide methods for forming a diamond heat spreader and integrating the diamond heat spreader with a heat source without generating voids at the interface. In one embodiment, a semiconductor layer can be epitaxially formed on a diamond substrate having a desirably low surface root mean square (RMS) roughness. The semiconductor epi-layer can be used as an interface layer for bonding the diamond substrate to the heat source to provide efficient heat spreading.