A semiconductor device includes a body region of a first conductivity type and a gate pattern disposed on the body region. The gate pattern has a linear portion extending in a first direction and having a uniform width and a bending portion extending from one end of the linear portion. The portion of a channel region located beneath the bending portion constitutes a channel whose length is greater than the length of the channel constituted by the portion of the channel region located beneath the linear portion.
申请公布号
US8610208(B2)
申请公布日期
2013.12.17
申请号
US201113183548
申请日期
2011.07.15
申请人
KIM YONGDON;LEE EUNGKYU;BAE SUNGRYOUL;KIM SOOBANG;JANG DONG-EUN;SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM YONGDON;LEE EUNGKYU;BAE SUNGRYOUL;KIM SOOBANG;JANG DONG-EUN