METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

The present invention provides a method for manufacturing a semiconductor component capable of improving the reliability of a transistor by forming a selective epitaxial film comprising a SiC epitaxial layer on a source and/or a drain of the transistor. The method for manufacturing the semiconductor component comprises forming first and second dummy gate patterns on a first active area and a second active area of a substrate; forming a first semiconductor pattern comprising a first SiC epitaxial layer on the first active area of both sides of the first dummy gate pattern; forming a second semiconductor pattern comprising a second SiC epitaxial layer on the second active area of both sides of the second dummy gate pattern; and forming a first silicide film and a second silicide film by siliciding a first upper semiconductor pattern and a second upper semiconductor pattern. The first semiconductor pattern comprises the first upper semiconductor pattern and a first lower semiconductor pattern formed on an upper part and a lower part of the first SiC epitaxial layer. The second semiconductor pattern comprises a second upper semiconductor pattern and a second lower semiconductor pattern formed on an upper part and a lower part of the second SiC epitaxial layer.