LIGHT RECEIVING ELEMENT, SEMICONDUCTOR EPITAXIAL WAFER, DETECTION DEVICE, AND METHOD FOR MANUFACTURING LIGHT RECEIVING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a light receiving element and the like which have high light receiving sensitivity from a near-infrared region to a mid-infrared region, and can stably obtain high quality while maintaining economical efficiency.SOLUTION: The light receiving element includes: an InP substrate which is transparent to light in a wavelength of 3 μm to 12 μm; an intermediate layer epitaxially grown on the InP substrate; a GaSb buffer layer located in contact with the intermediate layer; and a light receiving layer which is epitaxially grown on the GaSb buffer layer and has a type 2 multiple quantum well structure. The GaSb buffer layer is epitaxially grown on the intermediate layer while exceeding a range of a formal lattice matching condition.