| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that has reduced the number of photomasks relating to manufacture of an active matrix type liquid crystal display device, and is suitable for protecting a TFT from static electricity; and a semiconductor device manufactured by such a manufacturing method.SOLUTION: A semiconductor device 100 includes a plurality of source wirings 16, a thin-film transistor 50A, and a diode element 10A electrically connecting two of the plurality of source wirings 16. A connection area 26 of the source wirings 16 and the diode element 10A includes a first electrode 3, a second electrode 6a, a third electrode 9a, and a fourth electrode 9b. A part of the source wirings 16 is a source electrode of the thin-film transistor 50A; and the second electrode 6a and the source wirings 16 are formed separated from each other. |
