发明名称 |
MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening. |
申请公布号 |
US2013330896(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201214000901 |
申请日期 |
2012.09.04 |
申请人 |
MIYAHARA SHINICHIRO;YAMAMOTO TOSHIMASA;TAKAYA HIDEFUMI;SUGIMOTO MASAHIRO;WATANABE YUKIHIKO;SOEJIMA NARUMASA;ISHIKAWA TSUYOSHI;TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORPORATION |
发明人 |
MIYAHARA SHINICHIRO;YAMAMOTO TOSHIMASA;TAKAYA HIDEFUMI;SUGIMOTO MASAHIRO;WATANABE YUKIHIKO;SOEJIMA NARUMASA;ISHIKAWA TSUYOSHI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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