发明名称 FIELD FOCUSING FEATURES IN ReRAM CELL
摘要 PROBLEM TO BE SOLVED: To provide a ReRAM cell having a more stable resistance value.SOLUTION: A resistive random access memory (ReRAM) cell comprises a first conductive electrode (107) and a dielectric storage material layer (109) over the first conductive electrode (107). The dielectric storage material layer (109) is conducive to formation of conductive filaments during application of a filament-forming voltage to the cell. The cell includes a second conductive electrode (301) over the dielectric storage material layer (109), and an interface region comprising a plurality of interspersed field focusing features (405, 407) that are not photo-lithographically defined. The interface region is located either between the first conductive electrode (107) and the dielectric storage material layer (109) or between the dielectric storage material layer (109) and the second conductive electrode (301).
申请公布号 JP2013251540(A) 申请公布日期 2013.12.12
申请号 JP20130109877 申请日期 2013.05.24
申请人 FREESCALE SEMICONDUCTOR INC 发明人 FENG ZHOU;FRANK K BAKER JR;KO-MIN CHANG;HONG CHEONG MIN
分类号 H01L27/105;H01L27/10;H01L45/00;H01L49/00 主分类号 H01L27/105
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