发明名称 SINGLE CRYSTAL PRODUCTION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a single crystal production apparatus capable of protecting an electrode supporting a cylindrical heater from a raw material melt running-out from a crucible.SOLUTION: A single crystal production apparatus by Czochralski method includes a crucible for storing a raw material melt, a cylindrical heater for heating the raw material melt by enclosing the crucible, a main chamber for housing them, an electrode for supporting the cylindrical heater by being inserted from the bottom of the main chamber and supplying the power, and a run-out pan disposed on the bottom of the main chamber, for storing the raw material melt leaking from the crucible. In the single crystal production apparatus, a run-out cover for preventing the electrode from being splashed with the raw material melt leaking from the crucible is disposed on a furthermore lower position than the crucible and on a furthermore upper position than the electrode.
申请公布号 JP2013249240(A) 申请公布日期 2013.12.12
申请号 JP20120126678 申请日期 2012.06.04
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 SHIMADA AKIO
分类号 C30B15/00;C30B29/06 主分类号 C30B15/00
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