| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a graphene film less in impurities and high in quality.SOLUTION: A graphene film is deposited on a base material surface by a microwave surface-wave plasma CVD method in a gas atmosphere obtained by adding helium (He) gas into carbon-containing gas or mixed gas comprising carbon-containing gas and an oxidation inhibitor while base material temperature and pressure are set to 200-700°C and 50 Pa or less, respectively. When the base material is copper or the like and an oxide is present on the surface, impurities is suppressed from being introduced and the oxide is reduced, by performing plasma treatment using mixed gas obtained by diluting hydrogen gas with helium gas prior to the graphene deposition CVD processing. |
