发明名称 Plating Process and Structure
摘要 A system and method for plating a contact connected to a test pad is provided. An embodiment comprises inserting a blocking material into vias between the contact and the test pad. In another embodiment a blocking structure may be inserted between the contact and the test pad. In yet another embodiment a blocking layer may be inserted into a contact stack. Once the blocking material, the blocking structure, or the blocking layer have been formed, the contact may be plated, with the blocking material, the blocking structure, or the blocking layer reducing or preventing degradation of the test pad due to galvanic effects.
申请公布号 US2013330921(A1) 申请公布日期 2013.12.12
申请号 US201313966095 申请日期 2013.08.13
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 KAO CHIN-FU;HUANG CHENG-LIN;LIN JING-CHENG
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
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