THIN FILM TRANSISTOR, THIN FILM TRANSISTOR DISPLAY BOARD EQUIPPED WITH THE SAME AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor which reduces parasitic capacitance between a gate electrode of a thin film transistor and a source region or a drain region of a semiconductor layer and improves characteristics of the thin film transistor; and provide a thin film transistor display board and a manufacturing method of the same, which drop a kickback voltage caused by parasitic capacitance thereby to reduce a signal delay and a signal distortion.SOLUTION: A thin film transistor comprises: a gate electrode; a gate insulation film located above or below the gate electrode; a channel region which overlaps the gate electrode across the gate insulation film; and a source region and a drain region which are located in the same layer with the channel region and connected with the channel region and which lie opposite to each other across the channel region as a center. Each of the channel region, the source region and the drain region includes an oxide semiconductor. A carrier concentration in each of the source region and the drain region is larger than a carrier concentration in the channel region.