| 摘要 |
PROBLEM TO BE SOLVED: To suppress a surge voltage in turn-on while suppressing a surge voltage in turn-off in a semiconductor device having an IGBT element.SOLUTION: A semiconductor device in which a change speed of a gate voltage of some gate electrodes 17a among a plurality of gate electrodes 17a, 17b is made slower than a change speed of a gate voltage of remaining gate electrodes 17b comprises an emitter layer 20 formed so as to contact only a gate insulation film 16 where the gate electrodes 17a are arranged. With this configuration, electrons are not supplied to a drift layer 13 when a turn-on voltage is applied to the remaining gate electrodes 17b and the gate voltage exceeds a threshold voltage, and an IGBT element is not turned on. Because of this, turn-on of the IGBT element can be controlled by the gate electrodes 17a and a level of the surge voltage in turn-off and turn-on of the IGBT element can be lowered. |
