发明名称 METHOD OF FORMING THIN FILM POLY SILICON LAYER
摘要 A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. The substrate has a first surface. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon thin film deposition process.
申请公布号 US2013330934(A1) 申请公布日期 2013.12.12
申请号 US201313912180 申请日期 2013.06.06
申请人 WINTEK CORPORATION 发明人 HUANG HIENG-HSIUNG;WANG WEN-CHUN;CHANG HENG-YI;LIU CHIN-CHANG
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址