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发明名称
形成以闸应激源为特色之半导体装置的方法和半导体装置
摘要
本发明揭示一种半导体装置(10),其系形成于一半导体层(12)内。一闸堆叠(16、18)系形成于该半导体层上,且包含一第一传导层(22)与一在该第一层上的第二层(24)。该第一层系更具传导性且比该第二层提供更多的终止能力至一植入。一物种(46)系植入于该第二层内。源极/汲极区域(52)系形成于该闸堆叠之相对侧上的该半导体层内。在植入步骤之后,加热该闸堆叠,以使该闸堆叠在该闸堆叠下之一区域内的该半导体层内施加应力。
申请公布号
TWI419235
申请公布日期
2013.12.11
申请号
TW097119398
申请日期
2008.05.26
申请人
飞思卡尔半导体公司 美国
发明人
布莱恩A 温斯提;康斯坦丁V 洛可;辛文业
分类号
H01L21/336;H01L29/78
主分类号
H01L21/336
代理机构
代理人
陈长文 台北市松山区敦化北路201号7楼
主权项
地址
美国
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