发明名称 |
SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS |
摘要 |
A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias. |
申请公布号 |
KR20130135815(A) |
申请公布日期 |
2013.12.11 |
申请号 |
KR20137000161 |
申请日期 |
2011.06.03 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LEE, YONG WON;ZUBKOV VLADIMIR;SHEK MEI YEE;XIA LI QUN;IYENGAR PRAHALLAD;BALUJA SANJEEV;HENDRICKSON SCOTT A.;ROCHA ALVAREZ JUAN CARLOS;NOWAK THOMAS;WITTY DERRICK R. |
分类号 |
C23C16/04;C23C16/44;H01L21/205 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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