发明名称 SILICON DIOXIDE LAYER DEPOSITED WITH BDEAS
摘要 A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.
申请公布号 KR20130135815(A) 申请公布日期 2013.12.11
申请号 KR20137000161 申请日期 2011.06.03
申请人 APPLIED MATERIALS, INC. 发明人 LEE, YONG WON;ZUBKOV VLADIMIR;SHEK MEI YEE;XIA LI QUN;IYENGAR PRAHALLAD;BALUJA SANJEEV;HENDRICKSON SCOTT A.;ROCHA ALVAREZ JUAN CARLOS;NOWAK THOMAS;WITTY DERRICK R.
分类号 C23C16/04;C23C16/44;H01L21/205 主分类号 C23C16/04
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