| 摘要 |
A plurality of a first conductive layers are provided at a certain interval L in a vertical direction, with a dielectric sandwiched therebetween. The certain interval L is set so that the first dielectric has an equivalent oxide thickness DEOT that satisfies the following relation (1). Dsio2<DEOT<Dk  (1) Dsio2 denotes a thickness of the dielectric when the dielectric is composed of silicon oxide with a minimum thickness that can withstand a maximum voltage to be applied to the first conductive layers. Dk denotes such an equivalent oxide thickness of a first dielectric that provides the resistance value Rsio2. The resistance value Rsio2 being defined as a resistance value of the first semiconductor layer for each of the first conductive layers when the dielectric is composed of silicon oxide and has a film thickness of Dsio2. |
