GAN SEMICONDUCTOR DIODE

摘要

A nitride semiconductor diode is disclosed. The nitride semiconductor diode according to one embodiment of the present invention includes: a nitride semiconductor substrate; and anode and cathode electrodes which are separately arranged on the nitride semiconductor substrate. The nitride semiconductor diode more includes a first nitride semiconductor layer formed between the nitride semiconductor substrate and the cathode electrode and doped in an n-type. The first nitride semiconductor layer includes an extended part which is formed by being extended in the anode electrode direction.