发明名称 |
POLISHING COMPOSITION AND SLURRY COMPOSITION COMPRISING THE SAME |
摘要 |
The present invention relates to a polishing additive, a slurry composition including the same and a method for polishing substrates using the slurry composition. By performing polishing using the slurry composition of the present invention, conductivity can be enhanced and ionization of the slurry composition can be activated so that polishing rate of the center of a substrate surface can be enhanced and excellent polishing rate can be obtained by actions of anionic polymers and ammonium salts and polishing selectivity of oxide films can be increased compared with nitride films. [Reference numerals] (S100) Manufacture a polishing additive which comprises ammonium salts, a pH modifier, and anionic polymers including carboxyl groups (COOH);(S200) Add cerium oxide particles to the polishing additive |
申请公布号 |
KR20130133968(A) |
申请公布日期 |
2013.12.10 |
申请号 |
KR20120057128 |
申请日期 |
2012.05.30 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
JUNG, KI HWA;WANG, JUN HA;KWON, JANG KUK;KIM, JUNG YOON;HAN, MOUNG HOON;KWON, MIN SEOK |
分类号 |
C09K3/14;H01L21/304 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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