发明名称 |
Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process |
摘要 |
There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process. |
申请公布号 |
US8603732(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US20100978978 |
申请日期 |
2010.12.27 |
申请人 |
OGIHARA TSUTOMU;WATANABE TAKERU;KINSHO TAKESHI;TAKEMURA KATSUYA;FUJII TOSHIHIKO;KORI DAISUKE;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA TSUTOMU;WATANABE TAKERU;KINSHO TAKESHI;TAKEMURA KATSUYA;FUJII TOSHIHIKO;KORI DAISUKE |
分类号 |
G03F7/09;G03F7/11;G03F7/20;G03F7/30;G03F7/36 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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