CMOS IMAGE SENSORS AND METHOD FOR FORMING THE SAME

摘要

A device includes a diode. The diode includes first to third doped areas on a semiconductor substrate. The first doped area is formed with a first conductive type and has a first impurity concentration. The second doped area is formed with the first conductive type and has a second impurity concentration which is lower than the first impurity concentration. The second doped area surrounds the first doped area. The third doped area is formed with a second conductive type which is opposite to the first conductive type. The third doped area partially overlaps the first doped area and the second doped area.