发明名称 |
Pixel circuit, solid-state image pickup device, and camera |
摘要 |
A pixel circuit has first, second, and third field effect transistors integrated and connected in series from a photoelectric conversion element to a side of an amplifier circuit. The first and second field effect transistors have gate electrodes to be simultaneously collectively driven. A threshold voltage of the first field effect transistor is set to be higher than that of the second field effect transistor. As the gate electrodes are driven step by step, electrons generated by the photoelectric conversion element and transferred via the first field effect transistor are accumulated in a channel region of the second field effect transistor. The electrons accumulated in the channel region are transferred to an input of the amplifier circuit via the third field effect transistor. |
申请公布号 |
US8605184(B2) |
申请公布日期 |
2013.12.10 |
申请号 |
US200913126790 |
申请日期 |
2009.11.25 |
申请人 |
NISHIHARA TOSHIYUKI;SONY CORPORATION |
发明人 |
NISHIHARA TOSHIYUKI |
分类号 |
H04N5/335;H04N5/355;H04N5/359;H04N5/3745 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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