| 摘要 |
<p>Film deposition-reforming step comprises film deposition processing of depositing a silicon oxide film by making a Si-containing gas be absorbed on a wafer (W) by rotating a rotation table (2) and then supplying an O3 gas to the surface of the wafer continuously so that the Si-containing gas absorbed on the surface of the wafer reacts with the O3 gas, and reforming processing of performing reforming of the silicon oxide film by using plasma. After the film deposition-reforming step is performed, the supply of the Si-containing gas is stopped and the reforming step of the silicon oxide film using plasma is performed. [Reference numerals] (100) Control unit;(101) Memory unit;(102) Medium;(AA,BB,CC,DD) N_2 gas</p> |
