发明名称 Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
摘要 A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.
申请公布号 US8603733(B2) 申请公布日期 2013.12.10
申请号 US201113196530 申请日期 2011.08.02
申请人 TARUTANI SHINJI;TSUBAKI HIDEAKI;MIZUTANI KAZUYOSHI;WADA KENJI;HOSHINO WATARU;FUJIFILM CORPORATION 发明人 TARUTANI SHINJI;TSUBAKI HIDEAKI;MIZUTANI KAZUYOSHI;WADA KENJI;HOSHINO WATARU
分类号 G03F7/00;G03F7/004;G03F7/20;G03F7/32 主分类号 G03F7/00
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