| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device which forms a textured structure on a silicon substrate as quickly as possible and achieves high mass productivity.SOLUTION: A dry etching device EM of this invention is used for forming a textured structure on a surface of a silicon substrate W and includes: a first electrode 2; and a second electrode 4. One of the first electrode 2 and the second electrode 4 serves as substrate holding means holding the silicon substrate in a vacuum processing chamber 12, and the other of the first electrode 2 and the second electrode 4 serves as a shower plate which is disposed facing the silicon substrate as a gas introduction means introducing an etching gas into the vacuum processing chamber at reduced pressure. A power source 3, which inputs AC power having a predetermined frequency to at least the one of the first electrode and the second electrode, is provided. A distance between the first electrode and the second electrode is set to a range of 20 to 45 mm. |
