| 发明名称 |
ANORDNUNG KOMPLEMENTAERER FELDEFFEKTRANSISTOREN |
| 摘要 |
A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent. |
| 申请公布号 |
AT370560(B) |
申请公布日期 |
1983.04.11 |
| 申请号 |
AT19750004856 |
申请日期 |
1975.06.24 |
| 申请人 |
SONY CORPORATION |
发明人 |
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| 分类号 |
H01L29/78;H01L21/00;H01L21/283;H01L21/768;H01L23/522;H01L29/00;H01L29/76;(IPC1-7):01L21/314;01L29/78;01L29/04 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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