| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal capable of reducing dislocation.SOLUTION: A method for producing a silicon carbide single crystal includes a step B of subliming a raw material and recrystallizing the sublimed raw material on a first seed crystal by heating the first seed crystal and the raw material, a step C of producing a second seed crystal constituted of the silicon carbide single crystal by slicing a block produced in the step B, and a step E of subliming the raw material and recrystallizing the sublimed raw material on the second seed crystal by heating the second seed crystal and the raw material. In the step B, growth stress in the z-axis direction is ≤0.5 MPa, and each growth stress in the &thetas;-axis and r-axis directions is ≤25 MPa. |
