| 摘要 |
The present invention relates to a vertical light emitting diode device, which is suitable for a direct type back light unit (BLU), and a manufacturing method thereof and, more particularly, to a light emitting semiconductor device, which includes a polygonal chip fit for a vertical semiconductor device for the direct type BLU and a lens for the uniform dispersion of light, and a manufacturing method thereof. The vertical light emitting diode device implements a response and a screen division faster than an edge type. A metal support layer is formed by forming a light emitting semiconductor device layer for emitting light using an electrical flow on a substrate to mechanically support the surface of the light emitting semiconductor device layer. Thereafter, the lens for surrounding a light emitting diode chip on the substrate to induce the light emitted from the light emitting diode chip located on the substrate to a predetermined range is formed. The purpose of the present invention is to surround the light emitting diode chip considering the distance of the protruded part of the light emitting diode chip and the lens. [Reference numerals] (110) First semiconductor layer;(120) Active layer;(130) Second semiconductor layer;(140) Third semiconductor layer;(142) Reflective layer;(150) Metal support layer;(160) Bonding pad;(AA) Electrode layer;(BB) Current blocking layer |
