PROCESS FOR PRODUCING SILICON OXIDE FILMS FROM ORGANOAMINOSILANE PRECURSORS

摘要

The present invention relates to a depositing method of a silicon oxide layer on a substrate using CVD. The reaction of organic aminosilane precursors in which alkyl groups have more than two carbon atoms in the presence of an oxidizer produces the silicon oxide layer. The organic aminosilane precursors are denoted by formulas A, B, and C. Diisopropyl aminosilane is used as a suitable precursor for producing the silicon oxide layer.