| 摘要 |
PROBLEM TO BE SOLVED: To reduce the time required for design.SOLUTION: A standard cell of a functional circuit is configured that has a structure in which a first transistor and a second transistor are stacked. The standard cell is provided between a power-supply line and a ground line that are faced as viewed from a top-surface direction, and has a function circuit receiving a power-supply voltage via the power-supply line and the ground line. The function circuit has a first transistor provided in the substrate and containing silicon in a channel formation region; insulating layers provided on one surface of the substrate with the first transistor interposed therebetween; and a second transistor stacked on the insulating layers, in which at least a channel formation region is provided at a different position from the channel formation region of the first transistor as viewed from the top-surface direction, and containing an oxide semiconductor in the channel formation region. A source electrode or a drain electrode of the second transistor is electrically connected to a source electrode, a drain electrode, or a gate electrode of the first transistor in openings provided in the insulating layers. |
