发明名称 SEMICONDUCTOR APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, METHOD OF DESIGNING SEMICONDUCTOR APPARATUS, AND ELECTRONIC APPARATUS
摘要 A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
申请公布号 US2013320475(A1) 申请公布日期 2013.12.05
申请号 US201313962711 申请日期 2013.08.08
申请人 SONY CORPORATION 发明人 TAKAHASHI HIROSHI;SUKEGAWA SHUNICHI;INOUE KEISHI
分类号 H01L31/02;H01L21/768;H01L23/48 主分类号 H01L31/02
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