| 摘要 |
A semiconductor device includes a substrate including an active region, an insulation layer formed over the substrate, a plurality of openings formed in the insulation layer, a plurality of contact plugs filling the plurality of openings, a silicide layer formed over the substrate and between the substrate and each contact plug of the contact plugs in order to cover a bottom of each contact plug. The semiconductor device may decrease contact resistance by forming a silicide layer before the formation of openings regardless of the linewidth and aspect ratio of the openings. Also, because it does not have to consider step coverage based on the aspect ratio of openings, there is no limitation in the method of depositing a metal layer. Therefore, productivity may be improved. |
