发明名称 APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION ON A SURFACE
摘要 Apparatus for atomic layer deposition on a surface of a substrate, the apparatus comprising: a deposition member; a substrate table for supporting the substrate; a first reactant injector for supplying a first reactant; a second reactant injector for supplying a second reactant; a gas injector being arranged for creating, by means of gas injected by the gas injector, a gas barrier and optionally being arranged for creating a gas bearing; a heater for heating the gas that is to be injected by the gas injector; and an additional heater for heating the deposition member and the substrate table, and for heating the substrate. The deposition member has a gas inlet for the gas that is to be injected by the gas injector. The heater is provided outside the deposition member. The gas transported from the gas inlet is heated by the heater before said gas enters the gas inlet.
申请公布号 US2013323420(A1) 申请公布日期 2013.12.05
申请号 US201113878764 申请日期 2011.10.12
申请人 KNAAPAN RAYMOND JACOBUS WILHELMUS;POODT PAULUS WILLIBRORDUS GEORGE;SMELTINK JEROEN ANTHONIUS;OLIESLAGERS RUUD;GALAKTINONO OLEKSIY SERGIYOVICH;NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNO 发明人 KNAAPAN RAYMOND JACOBUS WILHELMUS;POODT PAULUS WILLIBRORDUS GEORGE;SMELTINK JEROEN ANTHONIUS;OLIESLAGERS RUUD;GALAKTINONO OLEKSIY SERGIYOVICH
分类号 C23C16/455 主分类号 C23C16/455
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