| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can crystallize a semiconductor film without being influenced by a lower gate electrode.SOLUTION: A manufacturing method of a semiconductor device comprises the steps of: forming a peeling layer on a substrate; forming an insulation film 107 on the peeling layer; forming a lower gate insulation film 103 on the insulation film 107; forming an amorphous semiconductor film on the lower gate insulation film 103; forming a crystalline semiconductor film on the lower gate insulation film 103 by crystallizing the amorphous semiconductor film; forming an upper gate insulation film 105 on the crystalline semiconductor film; forming upper gate electrodes 106a, 106b on the upper gate insulation film 105; peeling the peeling layer from the insulation film 107; and exposing the lower gate insulation film 103 by processing the insulation film 107 to form lower gate electrodes 115a, 115b which contact the exposed lower gate insulation film 103. |
