| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device, a solid state imaging device control method and an imaging device, which can obtain a good picture without the occurrence of large defects generated in a manner such that an influence of pixel defects caused by a dark current reaches a surrounding area even when exposure is performed for a long time in a solid state imaging device including a plurality of connected chips.SOLUTION: A solid state imaging device in which a first substrate and a second substrate are electrically connected by a connection part for electrically connecting the first substrate and the second substrate comprises a pixel part. The pixel part includes: pixels which are included in the first substrate and each of which includes a photoelectric conversion element for converting incident light to a signal charge and storing the signal charge; signal lines for supplying pixel signals corresponding to the signal charges generated by the photoelectric conversion elements to the second substrate via the connection part; a signal integration part included in the second substrate for integrating the pixel signals supplied through the signal lines; and a signal output part for outputting the pixel signals integrated by the signal integration part as output signals from the pixel part. |
