| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a metal film which can reduce an initial film thickness while ensuring bonding reliability; and provide a manufacturing method of the semiconductor device having such a configuration.SOLUTION: A semiconductor device comprises: a semiconductor substrate 10; and a metal film 20 formed on the semiconductor substrate 10. The metal film 20 is formed such that NiP particles 22 are included in a Ni matrix 21. A manufacturing method includes forming the metal film 20 on the semiconductor substrate 10 by performing sputtering using a target while heating a part of the semiconductor substrate 10, where the metal film 20 is to be formed to a temperature of not less than 280°C and not more than 870°C. |
