发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which accomplishes the reduction of the number of steps and high productivity, prevents the occurrence of voids, and achieves high reliability.SOLUTION: In a manufacturing method of a semiconductor device, a semiconductor chip having a connection terminal is joined to a substrate having a connection terminal. The manufacturing method of the semiconductor device includes: a temporary fixture step of temporarily fixing the semiconductor chip onto the substrate through an adhesive for a semiconductor sealing material; and an overmolding step of resin-sealing the semiconductor chip on the substrate. In the overmolding step, the joining between the connection terminal of the semiconductor chip and the connection terminal of the substrate and hardening of the adhesive for the semiconductor sealing material are concurrently conducted.
申请公布号 JP2013243288(A) 申请公布日期 2013.12.05
申请号 JP20120116446 申请日期 2012.05.22
申请人 HITACHI CHEMICAL CO LTD 发明人 TAZAWA TSUYOSHI;SUZUKI NAOYA
分类号 H01L23/29;H01L21/60;H01L23/31 主分类号 H01L23/29
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