| 摘要 |
PROBLEM TO BE SOLVED: To enhance the growth speed of an SiC single crystal by sufficiently supplying carbon to a seed crystal.SOLUTION: When an SiC single crystal (16) is produced by using a melt 12 containing Si in a graphite crucible 10, the SiC single crystal (16) is grown on the face of a seed crystal 14 by charging the seed crystal 14 of SiC and the raw material of the melt 12 into the graphite crucible 10, then heating and melting the raw material of the melt 12, and performing arc discharge (24) between a carbon electrode (22), installed at the upper part of the surface of the melt 12, and the surface of the melt 12 under atmospheric pressure or under pressurization. |
