发明名称 |
Semiconductor Device and Method of Backgrinding and Singulation of Semiconductor Wafer while Reducing Kerf Shifting and Protecting Wafer Surfaces |
摘要 |
A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer. |
申请公布号 |
US2013320519(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201213488029 |
申请日期 |
2012.06.04 |
申请人 |
KIM MINJUNG;LEE KYUNGHOON;YANG JOUNGIN;KWON WONIL;CHOI DAESIK;STATS CHIPPAC, LTD. |
发明人 |
KIM MINJUNG;LEE KYUNGHOON;YANG JOUNGIN;KWON WONIL;CHOI DAESIK |
分类号 |
H01L21/78;H01L23/48 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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