SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which transistors each using an oxide semiconductor for a channel formation region are formed in a plurality of layers which are stacked, which forms the transistors in respective layers by selectively controlling threshold voltage of the transistors; and provide a semiconductor device manufacturing method which can efficiently perform oxygen addition.SOLUTION: A semiconductor device manufacturing method comprises: performing first oxygen addition on a first oxide semiconductor film including a first channel formation region of a transistor in a lower layer to form an interlayer insulation film having an opening so as to expose the first channel formation region on the first oxide semiconductor film; and performing second oxygen addition on a second oxide semiconductor film which lies on the interlayer insulation film and includes a second channel formation region and the exposed first channel formation region.