SELF-REFERENCED SENSE AMPLIFIER FOR SPIN TORQUE MRAM
摘要
Circuitry and a method provide a plurality of timed control and bias voltages to sense amplifiers and write drivers of a spin-torque magnetoresistive random access memory array for improved power supply noise rejection, increased sensing speed with immunity for bank-to-bank noise coupling, and reduced leakage from off word line select devices in an active column.
申请公布号
WO2013154991(A3)
申请公布日期
2013.12.05
申请号
WO2013US35613
申请日期
2013.04.08
申请人
ANDRE, THOMAS;ALAM, SYED;SUBRAMANIAN, CHITRA;EVERSPIN TECHNOLOGIES, INC.