发明名称 |
SELF-ALIGNED PATTERNING FOR DEEP IMPLANTATION IN A SEMICONDUCTOR STRUCTURE |
摘要 |
Methods of forming self-aligned patterns for performing oppositely doped deep implantations in a semiconductor substrate are disclosed. The semiconductor substrate has implantation and non-implantation regions. The methods include forming a hardmask pattern for a first implantation with a first conductivity-type dopant, depositing an etch stop layer, filling trenches between the hardmask pattern with a sacrificial filler material having a higher wet etch resistance than the hardmask, removing a top portion of the sacrificial filler material and the etch stop layer over a top surface of the hardmask pattern, removing the hardmask pattern in the implantation region by wet etching, and performing a second ion implantation with a second conductivity type dopant opposite of the first conductivity type. |
申请公布号 |
US2013323917(A1) |
申请公布日期 |
2013.12.05 |
申请号 |
US201313839888 |
申请日期 |
2013.03.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY,;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LI CHEN-YAN;FU SHIH-CHI;KUO CHING-SEN;LU WEN-CHEN |
分类号 |
H01L21/266 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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