发明名称
摘要 A semiconductor device includes, a high side drive circuit for controlling the high side power device and including a circuit load, a low side drive circuit for controlling the low side power device, a VCC terminal connected to the low side drive circuit and for supplying a VCC potential to the low side drive circuit, the VCC potential serving as a power supply potential to the low side drive circuit, a bootstrap diode connected at its anode to the VCC terminal and at its cathode to the high side drive circuit and used to produce a VB potential serving as a power supply potential to the high side drive circuit, and means for turning off the circuit load before the VB potential becomes lower than the VCC potential.
申请公布号 JP5359918(B2) 申请公布日期 2013.12.04
申请号 JP20100031166 申请日期 2010.02.16
申请人 发明人
分类号 H02M1/08;H02M7/5387;H03F3/42 主分类号 H02M1/08
代理机构 代理人
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