发明名称 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THEREOF
摘要 <p>Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.</p>
申请公布号 EP2669963(A2) 申请公布日期 2013.12.04
申请号 EP20120739572 申请日期 2012.01.13
申请人 SEOUL OPTO DEVICE CO., LTD. 发明人 SUH, DAE WOONG;LEE, CHUNG HOON
分类号 H01L33/62;H01L33/00;H01L33/20;H01L33/22;H01L33/44;H01L33/48;H01L33/50;H01L33/56 主分类号 H01L33/62
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