发明名称 Semiconductor device with electrical fuse
摘要 A semiconductor device having an electrical fuse which is cut in a reliable manner and a method for manufacturing it. The electrical fuse is a multilayer structure which includes a polysilicon film and a metal silicide film such as a tungsten silicide film. By applying an electric current with a density of 40 mA/mum3 or more to the electrical fuse with a prescribed length, the fuse is cut by electromigration and a pinch effect in a reliable manner.
申请公布号 US8598680(B2) 申请公布日期 2013.12.03
申请号 US201113047844 申请日期 2011.03.15
申请人 YONEZU TOSHIAKI;IWAMOTO TAKESHI;RENESAS ELECTRONICS CORPORATION 发明人 YONEZU TOSHIAKI;IWAMOTO TAKESHI
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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