发明名称 |
Semiconductor device with electrical fuse |
摘要 |
A semiconductor device having an electrical fuse which is cut in a reliable manner and a method for manufacturing it. The electrical fuse is a multilayer structure which includes a polysilicon film and a metal silicide film such as a tungsten silicide film. By applying an electric current with a density of 40 mA/mum3 or more to the electrical fuse with a prescribed length, the fuse is cut by electromigration and a pinch effect in a reliable manner. |
申请公布号 |
US8598680(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US201113047844 |
申请日期 |
2011.03.15 |
申请人 |
YONEZU TOSHIAKI;IWAMOTO TAKESHI;RENESAS ELECTRONICS CORPORATION |
发明人 |
YONEZU TOSHIAKI;IWAMOTO TAKESHI |
分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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