发明名称 Modeling EUV lithography shadowing effect
摘要 Systems and techniques for modeling the EUV lithography shadowing effect are described. Some embodiments described herein provide a process model that includes an EUV lithography shadowing effect component. Polygon edges in a layout can be dissected into a set of segments. Next, the EUV lithography shadowing effect component can be used to bias each segment. The modified layout having the biased segments can then be used as input for other components in the process model.
申请公布号 US8601404(B2) 申请公布日期 2013.12.03
申请号 US201213363258 申请日期 2012.01.31
申请人 SONG HUA;SHIELY JAMES P.;ZAVYALOVA LENA;SYNOPSYS, INC. 发明人 SONG HUA;SHIELY JAMES P.;ZAVYALOVA LENA
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项
地址