发明名称 High voltage tolerant row driver
摘要 A circuit is configured to supply a first gate voltage (PG1) at a first voltage bias (VP1) to a source of a first transistor providing an output (WLS), providing the first voltage bias (VP1) to a second transistor and supplying a second voltage bias (VN1) and a second gate voltage (NG1) to a third transistor, the second transistor coupled in series to the third transistor and in parallel with the first transistor, to supply a third voltage bias (VP2) and a third gate voltage (PG2) to a fourth transistor, and a fourth voltage bias (VN2) and a fourth gate voltage (NG2) to a fifth transistor, the fourth transistor coupled in series to the fifth transistor, and the fourth and fifth transistors coupled to a gate of the second transistor, and to provide a fifth voltage bias (VN3) to a line connecting the third transistor to the fifth transistor.
申请公布号 US8599618(B2) 申请公布日期 2013.12.03
申请号 US201113339755 申请日期 2011.12.29
申请人 GEORGESCU BOGDAN I.;HIROSE RYAN T.;CYPRESS SEMICONDUCTOR CORP. 发明人 GEORGESCU BOGDAN I.;HIROSE RYAN T.
分类号 G11C11/34 主分类号 G11C11/34
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