| 摘要 |
<p>The present invention relates to a multi-layer transition metal dichalcogenide element and a semiconductor device using the same. By organizing a transition metal chalcogenide in multi-layers, desirably more than three layers, which was previously in a single layer, a wide range of wavelengths from ultraviolet rays to near-infrared rays can be absorbed. To achieve this, a multi-layer transition metal dichalcogenide is used to absorb rays of a relatively wide range of wavelengths compared to a single-layered transition metal dichalcogenide. The present invention discloses a multi-layer transition metal dichalcogenide element in which a semiconductor channel is formed by the multi-layer transition metal dichalcogenide.</p> |
