发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A semiconductor pattern including oxide semiconductor material is formed on a substrate. A first line pattern including a source electrode and a drain electrode separated from the source electrode is formed on the semiconductor pattern. A second line pattern including the gate electrode formed on the upper part of the source and the drain electrode and formed on the insulating pattern. A conduction pattern including an pixel electrode electrically connected to the drain electrode and formed on the insulating paten.</p>
申请公布号 KR20130130671(A) 申请公布日期 2013.12.02
申请号 KR20130136933 申请日期 2013.11.12
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KWAK, SANG KI;KONG, HYANG SHIK;KIM, SUN IL
分类号 H01L29/786;G02F1/1368;H01L21/336 主分类号 H01L29/786
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