发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A semiconductor pattern including oxide semiconductor material is formed on a substrate. A first line pattern including a source electrode and a drain electrode separated from the source electrode is formed on the semiconductor pattern. A second line pattern including the gate electrode formed on the upper part of the source and the drain electrode and formed on the insulating pattern. A conduction pattern including an pixel electrode electrically connected to the drain electrode and formed on the insulating paten.</p> |
申请公布号 |
KR20130130671(A) |
申请公布日期 |
2013.12.02 |
申请号 |
KR20130136933 |
申请日期 |
2013.11.12 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KWAK, SANG KI;KONG, HYANG SHIK;KIM, SUN IL |
分类号 |
H01L29/786;G02F1/1368;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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