| 摘要 |
A thin film depositing device is provided to facilitate management of an exhaust path by preventing the mixture of the source gas in a reactor and an exhaust line. A substrate support unit(210) is rotatably installed in a reactor(200). A plurality of substrate mounting parts are formed in the upper side of the substrate support unit. A gas injector(220) includes a plurality of source gas supply units and a plurality of purge gas supply units. The plurality of source gas supply units supply the different kind of source gas on the substrate support unit. The plurality of purge gas supply units supply the purge gas on the substrate support unit. An exhaust unit(230) includes an exhaust groove unit and a plurality of partitions. An exhaust pipe is formed in the exhaust groove part to exhaust the source gas. The plurality of partitions divide the exhaust groove part into the plurality of exhaust paths. |
